P-channel transistor IRF9520NS-IR, D²-PAK, TO-263, -100V
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Unit price
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0.69$
| Quantity in stock: 58 |
P-channel transistor IRF9520NS-IR, D²-PAK, TO-263, -100V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -100V. Ciss Gate Capacitance [pF]: 350pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -6.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: F9520. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 48W. Number of terminals: 3. RoHS: no. Switch-off delay tf[nsec.]: 28 ns. Switch-on time ton [nsec.]: 14 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 22:25
IRF9520NS-IR
17 parameters
Housing
D²-PAK
Housing (JEDEC standard)
TO-263
Drain-source voltage Uds [V]
-100V
Ciss Gate Capacitance [pF]
350pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-6.8A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.48 Ohms @ -4A
Gate breakdown voltage Ugs [V]
-4V
Manufacturer's marking
F9520
Max temperature
+175°C.
Maximum dissipation Ptot [W]
48W
Number of terminals
3
RoHS
no
Switch-off delay tf[nsec.]
28 ns
Switch-on time ton [nsec.]
14 ns
Original product from manufacturer
International Rectifier