P-channel transistor IRF9520NPBF, TO-220AB, -100V, 6A, -100V

P-channel transistor IRF9520NPBF, TO-220AB, -100V, 6A, -100V

Quantity
Unit price
1-49
1.96$
50+
1.40$
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Quantity in stock: 1731

P-channel transistor IRF9520NPBF, TO-220AB, -100V, 6A, -100V. Housing: TO-220AB. Drain-source voltage (Vds): -100V. Max drain current: 6A. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -100V. Channel type: P. Ciss Gate Capacitance [pF]: 350pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -6.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: IRF9520. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 48W. Number of terminals: 3. Power: 40W. RoHS: yes. Switch-off delay tf[nsec.]: 28 ns. Switch-on time ton [nsec.]: 14 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 22:25

Technical documentation (PDF)
IRF9520NPBF
21 parameters
Housing
TO-220AB
Drain-source voltage (Vds)
-100V
Max drain current
6A
Drain-source voltage Uds [V]
-100V
Channel type
P
Ciss Gate Capacitance [pF]
350pF
Component family
MOSFET, P-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
-6.8A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.48 Ohms @ -4A
Gate breakdown voltage Ugs [V]
-4V
Manufacturer's marking
IRF9520
Max temperature
+175°C.
Maximum dissipation Ptot [W]
48W
Number of terminals
3
Power
40W
RoHS
yes
Switch-off delay tf[nsec.]
28 ns
Switch-on time ton [nsec.]
14 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
International Rectifier