P-channel transistor IRF9310, 20A, 150uA, SO, SO-8, 30 v

P-channel transistor IRF9310, 20A, 150uA, SO, SO-8, 30 v

Quantity
Unit price
1-4
1.53$
5-24
1.35$
25-49
1.26$
50-94
1.10$
95+
0.94$
Quantity in stock: 59

P-channel transistor IRF9310, 20A, 150uA, SO, SO-8, 30 v. ID (T=25°C): 20A. Idss (max): 150uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). Channel type: P. Drain-source protection: no. Function: laptop switching circuits. G-S Protection: yes. Gate/source voltage Vgs: 20V. ID (T=100°C): 7.1A. IDss (min): 1uA. Id(imp): 160A. Number of terminals: 8. On-resistance Rds On: 0.039 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. Td(off): 65 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET transistor. Type of transistor: MOSFET. Vgs(th) max.: 2.4V. Vgs(th) min.: 1.3V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF9310
26 parameters
ID (T=25°C)
20A
Idss (max)
150uA
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
Channel type
P
Drain-source protection
no
Function
laptop switching circuits
G-S Protection
yes
Gate/source voltage Vgs
20V
ID (T=100°C)
7.1A
IDss (min)
1uA
Id(imp)
160A
Number of terminals
8
On-resistance Rds On
0.039 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
2.5W
Quantity per case
1
Td(off)
65 ns
Td(on)
25 ns
Technology
HEXFET Power MOSFET transistor
Type of transistor
MOSFET
Vgs(th) max.
2.4V
Vgs(th) min.
1.3V
Original product from manufacturer
International Rectifier