P-channel transistor IRF7416PBF, SO8, -30V
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Unit price
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1.68$
| Quantity in stock: 281 |
P-channel transistor IRF7416PBF, SO8, -30V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -30V. Ciss Gate Capacitance [pF]: 1700pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -5.6A. Gate breakdown voltage Ugs [V]: -2.04V. Manufacturer's marking: F7416. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 59 ns. Switch-on time ton [nsec.]: 18 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 17:57
IRF7416PBF
16 parameters
Housing
SO8
Drain-source voltage Uds [V]
-30V
Ciss Gate Capacitance [pF]
1700pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-10A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.02 Ohms @ -5.6A
Gate breakdown voltage Ugs [V]
-2.04V
Manufacturer's marking
F7416
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.5W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
59 ns
Switch-on time ton [nsec.]
18 ns
Original product from manufacturer
International Rectifier