P-channel transistor IRF7416, 10A, 25uA, SO, SO-8, 30 v

P-channel transistor IRF7416, 10A, 25uA, SO, SO-8, 30 v

Quantity
Unit price
1-4
1.03$
5-49
0.85$
50-99
0.72$
100+
0.65$
Quantity in stock: 30

P-channel transistor IRF7416, 10A, 25uA, SO, SO-8, 30 v. ID (T=25°C): 10A. Idss (max): 25uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 1700pF. Channel type: P. Cost): 890pF. Drain-source protection: yes. Function: Ultra Low On-Resistance. G-S Protection: no. ID (T=100°C): 7.1A. IDss (min): 1uA. Id(imp): 45A. Number of terminals: 8. On-resistance Rds On: 0.02 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. Td(off): 59 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.04V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF7416
28 parameters
ID (T=25°C)
10A
Idss (max)
25uA
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
1700pF
Channel type
P
Cost)
890pF
Drain-source protection
yes
Function
Ultra Low On-Resistance
G-S Protection
no
ID (T=100°C)
7.1A
IDss (min)
1uA
Id(imp)
45A
Number of terminals
8
On-resistance Rds On
0.02 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
2.5W
Quantity per case
1
Td(off)
59 ns
Td(on)
18 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
56 ns
Type of transistor
MOSFET
Vgs(th) max.
2.04V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier