P-channel transistor IRF7342TRPBF, SO8, -55V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -55V. Ciss Gate Capacitance [pF]: 690pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ -3.4A. Drive Voltage: -. Features: -. Gate breakdown voltage Ugs [V]: -3V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 3.4A. Information: -. MSL: 1. Manufacturer's marking: F7342. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Mounting Type: SMD. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Polarity: MOSFET P. RoHS: yes. Series: HEXFET. Switch-off delay tf[nsec.]: 64 ns. Switch-on time ton [nsec.]: 22 ns. Vdss (Drain to Source Voltage): -55V. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 21:51