P-channel transistor IRF7342PBF, SO8, -55V

P-channel transistor IRF7342PBF, SO8, -55V

Quantity
Unit price
1+
1.68$
Quantity in stock: 4

P-channel transistor IRF7342PBF, SO8, -55V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -55V. Ciss Gate Capacitance [pF]: 690pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -3V. Manufacturer's marking: F7342. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 64 ns. Switch-on time ton [nsec.]: 22 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 19:14

Technical documentation (PDF)
IRF7342PBF
16 parameters
Housing
SO8
Drain-source voltage Uds [V]
-55V
Ciss Gate Capacitance [pF]
690pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-3.4A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.105 Ohms @ -3.4A
Gate breakdown voltage Ugs [V]
-3V
Manufacturer's marking
F7342
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
64 ns
Switch-on time ton [nsec.]
22 ns
Original product from manufacturer
International Rectifier