P-channel transistor IRF7342, SO, SO-8
Quantity
Unit price
1-4
1.16$
5-24
0.97$
25-49
0.85$
50-99
0.79$
100+
0.68$
| +1 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Quantity in stock: 75 |
P-channel transistor IRF7342, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Assembly/installation: surface-mounted component (SMD). Channel type: P. Charge: 26nC. Drain current: -3.4A. Drain-source voltage: -55V. Equivalents: IRF7342PBF. Function: IDM--27Ap. Gate-source voltage: 20V, ±20V. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Polarity: unipolar. Power: 2W. Quantity per case: 2. RoHS: yes. Technology: HEXFET Power MOSFET. Thermal resistance: 62.5K/W. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27
IRF7342
19 parameters
Housing
SO
Housing (according to data sheet)
SO-8
Assembly/installation
surface-mounted component (SMD)
Channel type
P
Charge
26nC
Drain current
-3.4A
Drain-source voltage
-55V
Equivalents
IRF7342PBF
Function
IDM--27Ap
Gate-source voltage
20V, ±20V
Number of terminals
8
Pd (Power Dissipation, Max)
2W
Polarity
unipolar
Power
2W
Quantity per case
2
RoHS
yes
Technology
HEXFET Power MOSFET
Thermal resistance
62.5K/W
Original product from manufacturer
International Rectifier