P-channel transistor IRF7314PBF, SO8, -20V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -20V. Ciss Gate Capacitance [pF]: 780pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -5.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.058 Ohms @ -2.9A. Gate breakdown voltage Ugs [V]: -1.5V. Manufacturer's marking: F7314. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 63 ns. Switch-on time ton [nsec.]: 22 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 19:14