P-channel transistor IRF7314, SO, SO-8
Quantity
Unit price
1-4
0.85$
5-49
0.68$
50-94
0.57$
95+
0.50$
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| Quantity in stock: 271 |
P-channel transistor IRF7314, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Assembly/installation: surface-mounted component (SMD). Charge: 19nC. Drain current: -5.3A. Drain-source voltage: -20V. Function: P-channel MOSFET transistor. Gate-source voltage: 12V, ±12V. Number of terminals: 8. Polarity: unipolar. Power: 2W. Quantity per case: 2. RoHS: yes. Technology: HEXFET®. Thermal resistance: 62.5K/W. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27
IRF7314
16 parameters
Housing
SO
Housing (according to data sheet)
SO-8
Assembly/installation
surface-mounted component (SMD)
Charge
19nC
Drain current
-5.3A
Drain-source voltage
-20V
Function
P-channel MOSFET transistor
Gate-source voltage
12V, ±12V
Number of terminals
8
Polarity
unipolar
Power
2W
Quantity per case
2
RoHS
yes
Technology
HEXFET®
Thermal resistance
62.5K/W
Original product from manufacturer
International Rectifier