P-channel transistor IRF7306TRPBF, SO8, -30V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -30V. : 'enhanced'. Assembly/installation: SMD. Ciss Gate Capacitance [pF]: 440pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -3.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ -1.8A. Drain current: -3.6A. Drain-source voltage: -30V. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: F7306. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. Packaging: coil. Polarity: unipolar. Power: 2W. RoHS: yes. Switch-off delay tf[nsec.]: 25 ns. Switch-on time ton [nsec.]: 11 ns. Technology: HEXFET®. Type of transistor: P-MOSFET. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 21:53