P-channel transistor IRF7304PBF, SO8, -20V
Quantity
Unit price
1+
0.70$
| Quantity in stock: 9 |
P-channel transistor IRF7304PBF, SO8, -20V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -20V. Ciss Gate Capacitance [pF]: 610pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -4.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -1.5V. Manufacturer's marking: F7304. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 51 ns. Switch-on time ton [nsec.]: 8.4 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 19:14
IRF7304PBF
16 parameters
Housing
SO8
Drain-source voltage Uds [V]
-20V
Ciss Gate Capacitance [pF]
610pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-4.7A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.09 Ohms @ -2.2A
Gate breakdown voltage Ugs [V]
-1.5V
Manufacturer's marking
F7304
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
51 ns
Switch-on time ton [nsec.]
8.4 ns
Original product from manufacturer
International Rectifier