P-channel transistor IRF7233PBF, SO8, -12V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -12V. Ciss Gate Capacitance [pF]: 6000pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -9.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -9.5A. Gate breakdown voltage Ugs [V]: -1.5V. Manufacturer's marking: F7233. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 77 ns. Switch-on time ton [nsec.]: 26 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 22:31