P-channel transistor IRF7205PBF, 4.6A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 4.6A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 870pF. Channel type: P. Cost): 720pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 3.7A. IDss (min): 1uA. Id(imp): 15A. Number of terminals: 8. On-resistance Rds On: 0.07 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 97 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27