P-channel transistor IRF7204PBF, SO8, -20V

P-channel transistor IRF7204PBF, SO8, -20V

Quantity
Unit price
1+
1.12$
Quantity in stock: 11

P-channel transistor IRF7204PBF, SO8, -20V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -20V. Ciss Gate Capacitance [pF]: 860pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -5.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.006 Ohms @ -5.3A. Gate breakdown voltage Ugs [V]: -2.5V. Manufacturer's marking: F7204. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 150 ns. Switch-on time ton [nsec.]: 30 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 19:14

Technical documentation (PDF)
IRF7204PBF
16 parameters
Housing
SO8
Drain-source voltage Uds [V]
-20V
Ciss Gate Capacitance [pF]
860pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-5.3A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.006 Ohms @ -5.3A
Gate breakdown voltage Ugs [V]
-2.5V
Manufacturer's marking
F7204
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.5W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
150 ns
Switch-on time ton [nsec.]
30 ns
Original product from manufacturer
International Rectifier