P-channel transistor IRF7104, SO, SO-8, -20V. Housing: SO. Housing (JEDEC standard): -. Housing (according to data sheet): SO-8. Drain-source voltage Uds [V]: -20V. Assembly/installation: surface-mounted component (SMD). Ciss Gate Capacitance [pF]: 290pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -2.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ -1A. Function: 2xP-CH 20V. Gate breakdown voltage Ugs [V]: -3V. Manufacturer's marking: F7104. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. Number of terminals: 8. Quantity per case: 2. RoHS: no. Switch-off delay tf[nsec.]: 90 ns. Switch-on time ton [nsec.]: 40 ns. Technology: HEXFET Power MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27