P-channel transistor IRF6215SPBF, 13A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 150V

P-channel transistor IRF6215SPBF, 13A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 150V

Quantity
Unit price
1-4
1.66$
5-24
1.38$
25-49
1.24$
50+
1.12$
Quantity in stock: 33

P-channel transistor IRF6215SPBF, 13A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 150V. ID (T=25°C): 13A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 150V. Assembly/installation: surface-mounted component (SMD). C(in): 860pF. Channel type: P. Cost): 220pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 9A. IDss (min): 25uA. Id(imp): 44A. Number of terminals: 2. On-resistance Rds On: 0.29 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 110W. Quantity per case: 1. RoHS: yes. Td(off): 53 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF6215SPBF
30 parameters
ID (T=25°C)
13A
Idss (max)
250uA
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-263 )
Voltage Vds(max)
150V
Assembly/installation
surface-mounted component (SMD)
C(in)
860pF
Channel type
P
Cost)
220pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
9A
IDss (min)
25uA
Id(imp)
44A
Number of terminals
2
On-resistance Rds On
0.29 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
110W
Quantity per case
1
RoHS
yes
Td(off)
53 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
160 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier