P-channel transistor IRF5305STRLPBF, D²-PAK, TO-263, -55V
Quantity
Unit price
1-24
2.92$
25+
2.29$
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| Quantity in stock: 750 |
P-channel transistor IRF5305STRLPBF, D²-PAK, TO-263, -55V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. Ciss Gate Capacitance [pF]: 1200pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -31A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ -16A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: F5305S. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 110W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 39 ns. Switch-on time ton [nsec.]: 14 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 21:53
IRF5305STRLPBF
17 parameters
Housing
D²-PAK
Housing (JEDEC standard)
TO-263
Drain-source voltage Uds [V]
-55V
Ciss Gate Capacitance [pF]
1200pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-31A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.06 Ohms @ -16A
Gate breakdown voltage Ugs [V]
-4V
Manufacturer's marking
F5305S
Max temperature
+175°C.
Maximum dissipation Ptot [W]
110W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
39 ns
Switch-on time ton [nsec.]
14 ns
Original product from manufacturer
Infineon