P-channel transistor IRF5305, TO-220, 31A, 250uA, TO-220AB, 55V. Housing: TO-220. ID (T=25°C): 31A. Idss (max): 250uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 1200pF. Channel type: P. Charge: 42nC. Conditioning unit: 50. Conditioning: tubus. Cost): 520pF. Drain current: -31A. Drain-source protection: zener diode. Drain-source voltage: -55V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 1.4K/W. ID (T=100°C): 22A. IDss (min): 25uA. Id(imp): 110A. Number of terminals: 3. On-resistance Rds On: 0.06 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 110W. Polarity: unipolar. Power: 110W. Quantity per case: 1. RoHS: yes. Spec info: Dynamic dv/dt Rating. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27