P-channel transistor IRF5210SPBF, D²-PAK, TO-263, -100V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -100V. Ciss Gate Capacitance [pF]: 2700pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -40A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ -24A. Gate breakdown voltage Ugs [V]: -4V. Manufacturer's marking: F5210S. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 200W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 79 ns. Switch-on time ton [nsec.]: 17 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 23:16