P-channel transistor IRF5210S, 38A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=25°C): 38A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 2860pF. Channel type: P. Cost): 800pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 24A. IDss (min): 50uA. Id(imp): 140A. Marking on the case: F5210S. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 3.8W. Quantity per case: 1. Td(off): 72 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27