P-channel transistor IRF5210, TO-220, 40A, 250uA, TO-220AB, 100V. Housing: TO-220. ID (T=25°C): 40A. Idss (max): 250uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 2700pF. Channel type: P. Charge: 120nC. Conditioning unit: 50. Conditioning: tubus. Cost): 790pF. Drain current: -40A. Drain-source protection: zener diode. Drain-source voltage: -100V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. ID (T=100°C): 29A. IDss (min): 25uA. Id(imp): 140A. Number of terminals: 3. On-resistance Rds On: 0.06 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Polarity: unipolar. Power: 200W. Quantity per case: 1. RoHS: yes. Td(off): 79 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27