P-channel transistor IRF4905SPBF, D2PAK ( TO-263 ), TO-263, -55V, 70A, 250uA, D2PAK ( TO-263 ), 55V

P-channel transistor IRF4905SPBF, D2PAK ( TO-263 ), TO-263, -55V, 70A, 250uA, D2PAK ( TO-263 ), 55V

Quantity
Unit price
1-4
2.55$
5-24
2.29$
25-49
2.03$
50-99
1.86$
100+
1.65$
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P-channel transistor IRF4905SPBF, D2PAK ( TO-263 ), TO-263, -55V, 70A, 250uA, D2PAK ( TO-263 ), 55V. Housing: D2PAK ( TO-263 ). Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. ID (T=25°C): 70A. Idss (max): 250uA. Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 3400pF. Channel type: P. Ciss Gate Capacitance [pF]: 3500pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Cost): 1400pF. Drain current Id (A) @ 25°C: -64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Drain-source protection: zener diode. Function: Fast Switching, Ultra Low On-Resistance. G-S Protection: no. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs: 20V. ID (T=100°C): 42A. IDss (min): 25uA. Id(imp): 260A. Manufacturer's marking: F4905S. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Number of terminals: 2. Number of terminals: 3. On-resistance Rds On: 0.02 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 51 ns. Switch-on time ton [nsec.]: 20 ns. Td(off): 61 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 89 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF4905SPBF
44 parameters
Housing
D2PAK ( TO-263 )
Housing (JEDEC standard)
TO-263
Drain-source voltage Uds [V]
-55V
ID (T=25°C)
70A
Idss (max)
250uA
Housing (according to data sheet)
D2PAK ( TO-263 )
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
3400pF
Channel type
P
Ciss Gate Capacitance [pF]
3500pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Cost)
1400pF
Drain current Id (A) @ 25°C
-64A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.02 Ohms @ -38A
Drain-source protection
zener diode
Function
Fast Switching, Ultra Low On-Resistance
G-S Protection
no
Gate breakdown voltage Ugs [V]
-4V
Gate/source voltage Vgs
20V
ID (T=100°C)
42A
IDss (min)
25uA
Id(imp)
260A
Manufacturer's marking
F4905S
Max temperature
+175°C.
Maximum dissipation Ptot [W]
150W
Number of terminals
2
Number of terminals
3
On-resistance Rds On
0.02 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
200W
Quantity per case
1
RoHS
yes
Switch-off delay tf[nsec.]
51 ns
Switch-on time ton [nsec.]
20 ns
Td(off)
61 ns
Td(on)
18 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
89 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier