P-channel transistor IRF4905SPBF, D2PAK ( TO-263 ), TO-263, -55V, 70A, 250uA, D2PAK ( TO-263 ), 55V
| +367 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Quantity in stock: 676 |
P-channel transistor IRF4905SPBF, D2PAK ( TO-263 ), TO-263, -55V, 70A, 250uA, D2PAK ( TO-263 ), 55V. Housing: D2PAK ( TO-263 ). Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. ID (T=25°C): 70A. Idss (max): 250uA. Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 3400pF. Channel type: P. Ciss Gate Capacitance [pF]: 3500pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Cost): 1400pF. Drain current Id (A) @ 25°C: -64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Drain-source protection: zener diode. Function: Fast Switching, Ultra Low On-Resistance. G-S Protection: no. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs: 20V. ID (T=100°C): 42A. IDss (min): 25uA. Id(imp): 260A. Manufacturer's marking: F4905S. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Number of terminals: 2. Number of terminals: 3. On-resistance Rds On: 0.02 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 51 ns. Switch-on time ton [nsec.]: 20 ns. Td(off): 61 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 89 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27