P-channel transistor GT20D201, 20A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1C ), 250V

P-channel transistor GT20D201, 20A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1C ), 250V

Quantity
Unit price
1-4
23.42$
5-9
22.30$
10-24
20.38$
25+
19.66$
Obsolete product, soon to be removed from the catalog
Out of stock

P-channel transistor GT20D201, 20A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1C ), 250V. Ic(T=100°C): 20A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1C ). Collector/emitter voltage Vceo: 250V. Assembly/installation: PCB through-hole mounting. C(in): 1450pF. CE diode: no. Channel type: P. Collector current: 20A. Cost): 450pF. Function: P-channel MOS IGBT transistor. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 60A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 180W. RoHS: yes. Saturation voltage VCE(sat): 1.7V. Spec info: audio amplifier. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:26

Technical documentation (PDF)
GT20D201
21 parameters
Ic(T=100°C)
20A
Housing
TO-264 ( TOP-3L )
Housing (according to data sheet)
TO-264 ( 2-21F1C )
Collector/emitter voltage Vceo
250V
Assembly/installation
PCB through-hole mounting
C(in)
1450pF
CE diode
no
Channel type
P
Collector current
20A
Cost)
450pF
Function
P-channel MOS IGBT transistor
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
60A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
180W
RoHS
yes
Saturation voltage VCE(sat)
1.7V
Spec info
audio amplifier
Original product from manufacturer
Toshiba