P-channel transistor FQU11P06, 9.4A, 10uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V

P-channel transistor FQU11P06, 9.4A, 10uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V

Quantity
Unit price
1-4
1.37$
5-24
1.16$
25-49
1.02$
50-99
0.93$
100+
0.81$
Quantity in stock: 33

P-channel transistor FQU11P06, 9.4A, 10uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 9.4A. Idss (max): 10uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 420pF. Channel type: P. Cost): 195pF. Drain-source protection: diode. Function: QFET, Low gate charge (typ--13ns). G-S Protection: no. Gate/source voltage Vgs: 30 v. ID (T=100°C): 5.95A. IDss (min): 1uA. Id(imp): 37.6A. Number of terminals: 3. On-resistance Rds On: 0.15 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 38W. Quantity per case: 1. RoHS: yes. Spec info: Low Crss (typical 45pF), Fast switching. Td(off): 45 ns. Td(on): 6.5 ns. Technology: DMOS POWER-MOSFET. Trr Diode (Min.): 83 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:59

Technical documentation (PDF)
FQU11P06
30 parameters
ID (T=25°C)
9.4A
Idss (max)
10uA
Housing
TO-251 ( I-Pak )
Housing (according to data sheet)
TO-251AA ( I-PAK )
Voltage Vds(max)
60V
Assembly/installation
PCB through-hole mounting
C(in)
420pF
Channel type
P
Cost)
195pF
Drain-source protection
diode
Function
QFET, Low gate charge (typ--13ns)
G-S Protection
no
Gate/source voltage Vgs
30 v
ID (T=100°C)
5.95A
IDss (min)
1uA
Id(imp)
37.6A
Number of terminals
3
On-resistance Rds On
0.15 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
38W
Quantity per case
1
RoHS
yes
Spec info
Low Crss (typical 45pF), Fast switching
Td(off)
45 ns
Td(on)
6.5 ns
Technology
DMOS POWER-MOSFET
Trr Diode (Min.)
83 ns
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
Fairchild