P-channel transistor FQP3P50, TO-220, 2.7A, 10uA, TO220, 500V. Housing: TO-220. ID (T=25°C): 2.7A. Idss (max): 10uA. Housing (according to data sheet): TO220. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 510pF. Channel type: P. Charge: 23nC. Conditioning: tubus. Cost): 70pF. Drain current: -2.7A. Drain-source protection: yes. Drain-source voltage: -500V. G-S Protection: no. Gate-source voltage: ±30V. Gate/source voltage Vgs: 30 v. ID (T=100°C): 1.71A. IDss (min): 1uA. Id(imp): 10.8A. Number of terminals: 3. On-resistance Rds On: 3.9 Ohms. On-state resistance: 4.9 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 85W. Polarity: unipolar. Power: 85W. Quantity per case: 1. RoHS: yes. Spec info: faible charge de porte (typ 18nC). Td(off): 12 ns. Td(on): 35 ns. Technology: QFET, Enhancement mode power MOSFET. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:19