P-channel transistor FQB27P06TM, 27A, 10uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 60V

P-channel transistor FQB27P06TM, 27A, 10uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 60V

Quantity
Unit price
1-4
1.49$
5-49
1.23$
50-99
1.05$
100+
0.95$
Quantity in stock: 98

P-channel transistor FQB27P06TM, 27A, 10uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 60V. ID (T=25°C): 27A. Idss (max): 10uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 1100pF. Channel type: P. Cost): 510pF. Drain-source protection: diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 25V. ID (T=100°C): 19.1A. IDss (min): 1uA. Id(imp): 102A. Number of terminals: 2. On-resistance Rds On: 0.055 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 18 ns. Technology: DMOS, QFET. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FQB27P06TM
29 parameters
ID (T=25°C)
27A
Idss (max)
10uA
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-263 )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
1100pF
Channel type
P
Cost)
510pF
Drain-source protection
diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
25V
ID (T=100°C)
19.1A
IDss (min)
1uA
Id(imp)
102A
Number of terminals
2
On-resistance Rds On
0.055 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
120W
Quantity per case
1
RoHS
yes
Td(off)
30 ns
Td(on)
18 ns
Technology
DMOS, QFET
Trr Diode (Min.)
105 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
Fairchild