P-channel transistor FDV304P, SOT-23 ( TO-236 ), -25V, 0.46A, 10uA, SOT-23 ( TO236 ), 25V. Housing: SOT-23 ( TO-236 ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -25V. ID (T=25°C): 0.46A. Idss (max): 10uA. Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 25V. Assembly/installation: surface-mounted component (SMD). C(in): 63pF. Channel type: P. Ciss Gate Capacitance [pF]: 63pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Cost): 34pF. Drain current Id (A) @ 25°C: -0.46A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.87 Ohms @ -0.5A. Drain-source protection: yes. Features: -. Function: Low Input Charge. G-S Protection: no. Gate breakdown voltage Ugs [V]: -1.5V. Gate/source voltage Vgs: 8V. IDss (min): 1uA. Id @ Tc=25°C (Continuous Drain Current): 460mA. Id(imp): 1.5A. Information: -. Manufacturer's marking: 304. Marking on the case: 304. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.35W. Mounting Type: SMD. Number of terminals: 3. Number of terminals: 3. On-resistance Rds On: 1.22 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.35W. Polarity: MOSFET P. Quantity per case: 1. RoHS: yes. Series: -. Spec info: Operation gate voltage as low as 2.5V. Switch-off delay tf[nsec.]: 110 ns. Switch-on time ton [nsec.]: 20 ns. Td(off): 55 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Type of transistor: MOSFET. Vdss (Drain to Source Voltage): -25V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.65V. Original product from manufacturer: Fairchild. Minimum quantity: 5. Quantity in stock updated on 10/31/2025, 09:19