P-channel transistor FDS6679AZ, 13A, 1uA, SO, SO-8, 30 v

P-channel transistor FDS6679AZ, 13A, 1uA, SO, SO-8, 30 v

Quantity
Unit price
1-4
1.23$
5-24
1.10$
25-49
0.98$
50-99
0.89$
100+
0.76$
Quantity in stock: 11

P-channel transistor FDS6679AZ, 13A, 1uA, SO, SO-8, 30 v. ID (T=25°C): 13A. Idss (max): 1uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 2890pF. Channel type: P. Cost): 500pF. Drain-source protection: yes. G-S Protection: yes. Gate/source voltage Vgs: 25V. ID (T=100°C): n/a. IDss (min): n/a. Id(imp): 65A. Number of terminals: 8. On-resistance Rds On: 7.7m Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Spec info: Zero Gate Voltage Drain Current. Td(off): 210 ns. Td(on): 13 ns. Technology: PowerTrench MOSFET. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FDS6679AZ
28 parameters
ID (T=25°C)
13A
Idss (max)
1uA
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
2890pF
Channel type
P
Cost)
500pF
Drain-source protection
yes
G-S Protection
yes
Gate/source voltage Vgs
25V
Id(imp)
65A
Number of terminals
8
On-resistance Rds On
7.7m Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
2.5W
Quantity per case
1
RoHS
yes
Spec info
Zero Gate Voltage Drain Current
Td(off)
210 ns
Td(on)
13 ns
Technology
PowerTrench MOSFET
Trr Diode (Min.)
40 ns
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
1V
Original product from manufacturer
Fairchild