P-channel transistor FDS6675BZ, SO, -30V, 11A, 1uA, SO-8, 30 v. Housing: SO. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -30V. ID (T=25°C): 11A. Idss (max): 1uA. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 1855pF. Channel type: P. Ciss Gate Capacitance [pF]: 2470pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Cost): 355pF. Drain current Id (A) @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ -11A. Drain-source protection: yes. Function: Extended VGS range (-25V) for battery operated applications. G-S Protection: yes. Gate breakdown voltage Ugs [V]: -3V. Gate/source voltage Vgs: 25V. ID (T=100°C): n/a. IDss (min): n/a. Id(imp): 55A. Manufacturer's marking: -. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Number of terminals: 8. Number of terminals: 8. On-resistance Rds On: 17.4m Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Spec info: FDS6675BZ. Switch-off delay tf[nsec.]: 200 ns. Switch-on time ton [nsec.]: 10 ns. Td(off): 120ns. Td(on): 3 ns. Technology: PowerTrench MOSFET. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19