P-channel transistor FDS4435BZ, SO, 8.8A, 1uA, SO-8, 30 v. Housing: SO. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. : 'enhanced'. Assembly/installation: surface-mounted component (SMD). C(in): 1385pF. Channel type: P. Charge: 40nC. Cost): 275pF. Drain current: -8.8A. Drain-source protection: no. Drain-source voltage: -30V. Function: battery charge controller. G-S Protection: yes. Gate-source voltage: ±20V. Gate/source voltage Vgs: 25V. Id(imp): 50A. Number of terminals: 8. On-resistance Rds On: 0.016 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Polarity: unipolar. Quantity per case: 1. RoHS: yes. Spec info: HBM ESD protection level of 3.8kV. Td(off): 30 ns. Td(on): 10 ns. Technology: P-channel. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19