P-channel transistor FDS4435A, 9A, 10uA, SO, SO-8, 30 v

P-channel transistor FDS4435A, 9A, 10uA, SO, SO-8, 30 v

Quantity
Unit price
1-4
1.08$
5-49
0.90$
50-99
0.76$
100+
0.65$
Quantity in stock: 52

P-channel transistor FDS4435A, 9A, 10uA, SO, SO-8, 30 v. ID (T=25°C): 9A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 2010pF. Channel type: P. Cost): 590pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 50A. Number of terminals: 8. On-resistance Rds On: 0.015 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 100 ns. Td(on): 12 ns. Technology: P-channel. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FDS4435A
28 parameters
ID (T=25°C)
9A
Idss (max)
10uA
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
2010pF
Channel type
P
Cost)
590pF
Drain-source protection
yes
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
50A
Number of terminals
8
On-resistance Rds On
0.015 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
2.5W
Quantity per case
1
RoHS
yes
Td(off)
100 ns
Td(on)
12 ns
Technology
P-channel
Trr Diode (Min.)
36ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
Fairchild