P-channel transistor FDN5618P, SOT-23, -60V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -60V. Ciss Gate Capacitance [pF]: 430pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -1.25A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.185 Ohms @ -1A. Gate breakdown voltage Ugs [V]: -3V. Manufacturer's marking: 618. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 16.5 ns. Switch-on time ton [nsec.]: 6.5 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 22:25