P-channel transistor FDN358P, SOT-23 ( TO-236 ), -30V, 1.5A, 10uA, SOT-23, 30 v. Housing: SOT-23 ( TO-236 ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -30V. ID (T=25°C): 1.5A. Idss: 10uA. Housing (according to data sheet): SOT-23. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 182pF. Channel type: P. Ciss Gate Capacitance [pF]: 182pF. Component family: MOSFET, P-MOS. Conditioning unit: 3000. Conditioning: roll. Configuration: surface-mounted component (SMD). Cost): 56pF. Drain current Id (A) @ 25°C: -1.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ -1.2A. Drain-source protection: yes. Function: Single P-Channel, Logic Level. G-S Protection: no. Gate breakdown voltage Ugs [V]: -3V. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 5A. Manufacturer's marking: 358. Marking on the case: 358. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Number of terminals: 3. On-resistance Rds On: 0.105 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 21 ns. Switch-on time ton [nsec.]: 10 ns. Technology: PowerTrench MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19