P-channel transistor FDN306P, SOT-23, -12V
Quantity
Unit price
1-24
0.76$
25-99
0.61$
100-499
0.54$
500+
0.43$
| Quantity in stock: 2305 |
P-channel transistor FDN306P, SOT-23, -12V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -12V. Ciss Gate Capacitance [pF]: 1138pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -2.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ -2.6A. Gate breakdown voltage Ugs [V]: -1.5V. Manufacturer's marking: 306. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 61 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 22:25
FDN306P
16 parameters
Housing
SOT-23
Drain-source voltage Uds [V]
-12V
Ciss Gate Capacitance [pF]
1138pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-2.6A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.04 Ohms @ -2.6A
Gate breakdown voltage Ugs [V]
-1.5V
Manufacturer's marking
306
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.5W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
61 ns
Switch-on time ton [nsec.]
20 ns
Original product from manufacturer
Onsemi (fairchild)