P-channel transistor FDC638P, SOT-23/6, -20V
Quantity
Unit price
1-99
1.13$
100-499
1.01$
500+
0.89$
| Quantity in stock: 552 |
P-channel transistor FDC638P, SOT-23/6, -20V. Housing: SOT-23/6. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -20V. Ciss Gate Capacitance [pF]: 1160pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -4.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.039 Ohms @ -4.5A. Gate breakdown voltage Ugs [V]: -1.5V. Manufacturer's marking: .638. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.6W. Number of terminals: 6. RoHS: yes. Switch-off delay tf[nsec.]: 33 ns. Switch-on time ton [nsec.]: 12 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 22:31
FDC638P
16 parameters
Housing
SOT-23/6
Drain-source voltage Uds [V]
-20V
Ciss Gate Capacitance [pF]
1160pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-4.5A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.039 Ohms @ -4.5A
Gate breakdown voltage Ugs [V]
-1.5V
Manufacturer's marking
.638
Max temperature
+150°C.
Maximum dissipation Ptot [W]
1.6W
Number of terminals
6
RoHS
yes
Switch-off delay tf[nsec.]
33 ns
Switch-on time ton [nsec.]
12 ns
Original product from manufacturer
Onsemi (fairchild)