P-channel transistor BSS84LT1G-PD, SOT-23, TO-236AB, -50V

P-channel transistor BSS84LT1G-PD, SOT-23, TO-236AB, -50V

Quantity
Unit price
1-99
0.23$
100+
0.12$
Quantity in stock: 39752

P-channel transistor BSS84LT1G-PD, SOT-23, TO-236AB, -50V. Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: -50V. Ciss Gate Capacitance [pF]: 36pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -0.13A. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ -0.13A. Gate breakdown voltage Ugs [V]: -2V. Manufacturer's marking: Pd (Power Dissipation, Max). Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.225W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 12 ns. Switch-on time ton [nsec.]: 3.6 ns. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/02/2025, 23:36

BSS84LT1G-PD
17 parameters
Housing
SOT-23
Housing (JEDEC standard)
TO-236AB
Drain-source voltage Uds [V]
-50V
Ciss Gate Capacitance [pF]
36pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-0.13A
Drain current through resistor Rds [Ohm] @ Ids [A]
10 Ohms @ -0.13A
Gate breakdown voltage Ugs [V]
-2V
Manufacturer's marking
Pd (Power Dissipation, Max)
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.225W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
12 ns
Switch-on time ton [nsec.]
3.6 ns
Original product from manufacturer
Onsemi