P-channel transistor BSP250, SOT223, -30V. Housing: SOT223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -30V. : 'enhanced'. Assembly/installation: SMD. Charge: 25nC. Ciss Gate Capacitance [pF]: 250pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ -1A. Drain current: -3A. Drain-source voltage: -30V. Drive Voltage: -. Features: -. Gate breakdown voltage Ugs [V]: -2.8V. Gate-source voltage: ±20V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 3A. Information: -. MSL: -. Manufacturer's marking: BSP250.115. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.65W. Mounting Type: SMD. Number of terminals: 3. Operating temperature: -. Pd (Power Dissipation, Max): 5W. Polarity: unipolar. Power: 5W. Qg (Total Gate Charge, Max @ Vgs): -. Rds On (Max) @ Id, Vgs: 0.25 Ohms / -1A / -10V. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 140 ns. Switch-on time ton [nsec.]: 80 ns. Type of transistor: P-MOSFET. Vdss (Drain to Source Voltage): -30V. Vgs(th) (Max) @ Id: -. Original product from manufacturer: Nxp. Quantity in stock updated on 11/02/2025, 23:36