P-channel transistor BS250P, TO-92, 0.23A, -45V, 500nA, TO-92, 45V. Housing: TO-92. Housing (JEDEC standard): -. ID (T=25°C): 0.23A. Drain-source voltage Uds [V]: -45V. Idss (max): 500nA. Housing (according to data sheet): TO-92. Voltage Vds(max): 45V. : 'enhanced'. Assembly/installation: PCB through-hole mounting. C(in): 60pF. Channel type: P. Ciss Gate Capacitance [pF]: 60pF. Component family: MOSFET, P-MOS. Conditioning: -. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -0.23A. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ -0.2A. Drain current: -0.23A. Drain-source protection: no. Drain-source voltage: -45V. G-S Protection: no. Gate breakdown voltage Ugs [V]: -3.5V. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. Id(imp): 3A. Manufacturer's marking: BS250P. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.7W. Number of terminals: 3. Number of terminals: 3. On-resistance Rds On: 14 Ohms. On-state resistance: 14 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.7W. Polarity: unipolar. Power: 0.7W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 20 ns. Switch-on time ton [nsec.]: 20 ns. Td(off): 20 ns. Td(on): 20 ns. Technology: ENHANCEMENT MODE VERTICAL DMOS FET. Type of transistor: P-MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V. Original product from manufacturer: Diodes Inc. Quantity in stock updated on 10/31/2025, 09:25