P-channel transistor AP9575AGH, 17A, 250uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V

P-channel transistor AP9575AGH, 17A, 250uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V

Quantity
Unit price
1-4
1.00$
5-24
0.84$
25-49
0.75$
50-99
0.68$
100+
0.58$
Quantity in stock: 24

P-channel transistor AP9575AGH, 17A, 250uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 17A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 1440pF. Channel type: P. Cost): 160pF. Drain-source protection: yes. Function: -. G-S Protection: no. Gate/source voltage Vgs: 30 v. ID (T=100°C): 11A. IDss (min): 10uA. Id(imp): 60A. Number of terminals: 3. On-resistance Rds On: 0.064 Ohms. Operating temperature: -55°C...+150°C. Pd (Power Dissipation, Max): 36W. Quantity per case: 1. RoHS: yes. Td(off): 45 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Power MOSFET'. Trr Diode (Min.): 43 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Advanced Power. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
AP9575AGH
29 parameters
ID (T=25°C)
17A
Idss (max)
250uA
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
1440pF
Channel type
P
Cost)
160pF
Drain-source protection
yes
G-S Protection
no
Gate/source voltage Vgs
30 v
ID (T=100°C)
11A
IDss (min)
10uA
Id(imp)
60A
Number of terminals
3
On-resistance Rds On
0.064 Ohms
Operating temperature
-55°C...+150°C
Pd (Power Dissipation, Max)
36W
Quantity per case
1
RoHS
yes
Td(off)
45 ns
Td(on)
12 ns
Technology
'Enhancement Mode Power MOSFET'
Trr Diode (Min.)
43 ns
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
1V
Original product from manufacturer
Advanced Power