P-channel transistor AO4427, 12.5A, 5uA, SO, SO-8, 30 v

P-channel transistor AO4427, 12.5A, 5uA, SO, SO-8, 30 v

Quantity
Unit price
1-4
0.86$
5-49
0.68$
50-99
0.58$
100+
0.51$
Quantity in stock: 337

P-channel transistor AO4427, 12.5A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 12.5A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 2330pF. Channel type: P. Cost): 480pF. Drain-source protection: diode. Function: Switching or PWM applications. G-S Protection: yes. Gate/source voltage Vgs: 25V. ID (T=100°C): 10.5A. IDss (min): 1uA. Id(imp): 60A. Number of terminals: 8. On-resistance Rds On: 0.0094 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 3W. Quantity per case: 1. RoHS: yes. Td(off): 49.5 ns. Td(on): 12.8 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Trr Diode (Min.): 28 ns. Type of transistor: FET. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Original product from manufacturer: Alpha & Omega Semiconductors. Quantity in stock updated on 10/31/2025, 09:52

Technical documentation (PDF)
AO4427
30 parameters
ID (T=25°C)
12.5A
Idss (max)
5uA
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
2330pF
Channel type
P
Cost)
480pF
Drain-source protection
diode
Function
Switching or PWM applications
G-S Protection
yes
Gate/source voltage Vgs
25V
ID (T=100°C)
10.5A
IDss (min)
1uA
Id(imp)
60A
Number of terminals
8
On-resistance Rds On
0.0094 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
3W
Quantity per case
1
RoHS
yes
Td(off)
49.5 ns
Td(on)
12.8 ns
Technology
'Enhancement Mode Field Effect Transistor'
Trr Diode (Min.)
28 ns
Type of transistor
FET
Vgs(th) max.
3V
Vgs(th) min.
1.7V
Original product from manufacturer
Alpha & Omega Semiconductors