P-channel transistor AO4407A, SO, 9.2A, 50uA, SO-8, 30 v

P-channel transistor AO4407A, SO, 9.2A, 50uA, SO-8, 30 v

Quantity
Unit price
1-4
0.56$
5-24
0.47$
25-49
0.40$
50-99
0.36$
100+
0.30$
+50 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 193

P-channel transistor AO4407A, SO, 9.2A, 50uA, SO-8, 30 v. Housing: SO. ID (T=25°C): 9.2A. Idss (max): 50uA. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 2060pF. Channel type: P. Charge: 30nC. Cost): 370pF. Drain current: -12A, -10A. Drain-source protection: yes. Drain-source voltage: -30V. G-S Protection: no. Gate-source voltage: ±25V. Gate/source voltage Vgs: 25V. ID (T=100°C): 7.4A. IDss (min): 10uA. Id(imp): 60A. Note: screen printing/SMD code 4407A. Number of outputs: 1. Number of terminals: 8. On-resistance Rds On: 0.0085 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1.7W. Polarity: unipolar. Power: 2W. Quantity per case: 1. RoHS: yes. Td(off): 24 ns. Td(on): 11 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Original product from manufacturer: Alpha & Omega Semiconductors. Quantity in stock updated on 10/31/2025, 09:52

Technical documentation (PDF)
AO4407A
37 parameters
Housing
SO
ID (T=25°C)
9.2A
Idss (max)
50uA
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
2060pF
Channel type
P
Charge
30nC
Cost)
370pF
Drain current
-12A, -10A
Drain-source protection
yes
Drain-source voltage
-30V
G-S Protection
no
Gate-source voltage
±25V
Gate/source voltage Vgs
25V
ID (T=100°C)
7.4A
IDss (min)
10uA
Id(imp)
60A
Note
screen printing/SMD code 4407A
Number of outputs
1
Number of terminals
8
On-resistance Rds On
0.0085 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
1.7W
Polarity
unipolar
Power
2W
Quantity per case
1
RoHS
yes
Td(off)
24 ns
Td(on)
11 ns
Technology
'Enhancement Mode Field Effect Transistor'
Trr Diode (Min.)
30 ns
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
1.7V
Original product from manufacturer
Alpha & Omega Semiconductors