P-channel transistor AO3401A, SOT-23 ( TO-236 ), 4.3A, 5uA, SOT-23 ( TO236 ), 30 v

P-channel transistor AO3401A, SOT-23 ( TO-236 ), 4.3A, 5uA, SOT-23 ( TO236 ), 30 v

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Unit price
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100-199
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200+
0.21$
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P-channel transistor AO3401A, SOT-23 ( TO-236 ), 4.3A, 5uA, SOT-23 ( TO236 ), 30 v. Housing: SOT-23 ( TO-236 ). ID (T=25°C): 4.3A. Idss (max): 5uA. Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. : 'enhanced'. Assembly/installation: surface-mounted component (SMD). C(in): 933pF. Channel type: P. Charge: 7nC. Cost): 108pF. Drain current: -4A. Drain-source protection: yes. Drain-source voltage: -30V. Function: Low Input Charge. G-S Protection: no. Gate-source voltage: ±12V. Gate/source voltage Vgs: 12V. ID (T=100°C): 3.8A. IDss (min): 1uA. Id(imp): 25A. Number of terminals: 3. On-resistance Rds On: 0.036 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1.4W. Polarity: unipolar. Power: 1.4W. Quantity per case: 1. RoHS: yes. Spec info: Operation gate voltage as low as 2.5V. Td(off): 42 ns. Td(on): 5.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Temperature: +150°C. Trr Diode (Min.): 21 ns. Type of transistor: MOSFET. Vgs(th) max.: 1.3V. Vgs(th) min.: 0.6V. Original product from manufacturer: Alpha & Omega Semiconductors. Quantity in stock updated on 10/31/2025, 09:52

Technical documentation (PDF)
AO3401A
39 parameters
Housing
SOT-23 ( TO-236 )
ID (T=25°C)
4.3A
Idss (max)
5uA
Housing (according to data sheet)
SOT-23 ( TO236 )
Voltage Vds(max)
30 v
'enhanced'
Assembly/installation
surface-mounted component (SMD)
C(in)
933pF
Channel type
P
Charge
7nC
Cost)
108pF
Drain current
-4A
Drain-source protection
yes
Drain-source voltage
-30V
Function
Low Input Charge
G-S Protection
no
Gate-source voltage
±12V
Gate/source voltage Vgs
12V
ID (T=100°C)
3.8A
IDss (min)
1uA
Id(imp)
25A
Number of terminals
3
On-resistance Rds On
0.036 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
1.4W
Polarity
unipolar
Power
1.4W
Quantity per case
1
RoHS
yes
Spec info
Operation gate voltage as low as 2.5V
Td(off)
42 ns
Td(on)
5.2 ns
Technology
'Enhancement Mode Field Effect Transistor'
Temperature
+150°C
Trr Diode (Min.)
21 ns
Type of transistor
MOSFET
Vgs(th) max.
1.3V
Vgs(th) min.
0.6V
Original product from manufacturer
Alpha & Omega Semiconductors