P-channel transistor 2SJ598, 12A, 12A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 60V. ID (T=25°C): 12A. Idss (max): 12A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 720pF. Channel type: P. Cost): 150pF. Drain-source protection: diode. Function: integrated protection diode. G-S Protection: yes. Gate/source voltage Vgs: 20V. Id(imp): 30A. Number of terminals: 3. On-resistance Rds On: 0.13 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 23W. Quantity per case: 1. Td(off): 35 ns. Td(on): 7 ns. Technology: P-channel MOS Field Effect Transistor. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Original product from manufacturer: Nec. Quantity in stock updated on 10/31/2025, 09:31