P-channel transistor 2SJ584, 4.5A, 100uA, TO-220FP, TO-220FP, 250V

P-channel transistor 2SJ584, 4.5A, 100uA, TO-220FP, TO-220FP, 250V

Quantity
Unit price
1-4
1.73$
5-24
1.43$
25-49
1.21$
50+
1.09$
Quantity in stock: 101

P-channel transistor 2SJ584, 4.5A, 100uA, TO-220FP, TO-220FP, 250V. ID (T=25°C): 4.5A. Idss (max): 100uA. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. Assembly/installation: PCB through-hole mounting. C(in): 450pF. Channel type: P. Cost): 120pF. Drain-source protection: diode. Function: Ultrahigh-Speed Switching, IDP 18App/10us. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 18A. Number of terminals: 3. On-resistance Rds On: 0.95 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. Td(off): 52 ns. Td(on): 30 ns. Technology: silicon MOSFET transistor. Type of transistor: MOSFET. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SJ584
24 parameters
ID (T=25°C)
4.5A
Idss (max)
100uA
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
250V
Assembly/installation
PCB through-hole mounting
C(in)
450pF
Channel type
P
Cost)
120pF
Drain-source protection
diode
Function
Ultrahigh-Speed Switching, IDP 18App/10us
G-S Protection
yes
Gate/source voltage Vgs
30 v
Id(imp)
18A
Number of terminals
3
On-resistance Rds On
0.95 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
25W
Quantity per case
1
Td(off)
52 ns
Td(on)
30 ns
Technology
silicon MOSFET transistor
Type of transistor
MOSFET
Original product from manufacturer
Sanyo