P-channel transistor 2SJ512, 5A, 5A, TO-220FP, TO-220FP, 250V. ID (T=25°C): 5A. Idss (max): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. Assembly/installation: PCB through-hole mounting. C(in): 800pF. Channel type: P. Cost): 250pF. Drain-source protection: diode. Function: 'Enhancement Mode Low Drain-Source On Resistance'. G-S Protection: yes. Gate/source voltage Vgs: 20V. Id(imp): 20A. Number of terminals: 3. On-resistance Rds On: 1 Ohm. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 30W. Quantity per case: 1. Td(off): 70 ns. Td(on): 35 ns. Technology: Silicon P Chanel Mos Fet. Trr Diode (Min.): 205 ns. Type of transistor: MOSFET. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31