P-channel transistor 2SJ449, 6A, 100uA, TO-220FP, TO-220FP, 250V

P-channel transistor 2SJ449, 6A, 100uA, TO-220FP, TO-220FP, 250V

Quantity
Unit price
1-4
2.32$
5-9
1.94$
10-24
1.74$
25-49
1.61$
50+
1.45$
Quantity in stock: 3

P-channel transistor 2SJ449, 6A, 100uA, TO-220FP, TO-220FP, 250V. ID (T=25°C): 6A. Idss (max): 100uA. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. Assembly/installation: PCB through-hole mounting. C(in): 1040pF. Channel type: P. Cost): 360pF. Drain-source protection: yes. Function: SWITCHING, POWER MOS FET. G-S Protection: no. Gate/source voltage (off) min.: 4 v. Gate/source voltage Vgs: 30 v. IDss (min): -. Id(imp): 24A. Number of terminals: 3. On-resistance Rds On: 0.55 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. Td(off): 47 ns. Td(on): 24 ns. Technology: P-CHANNEL POWER MOS FET. Type of transistor: MOSFET. Original product from manufacturer: Nec. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SJ449
25 parameters
ID (T=25°C)
6A
Idss (max)
100uA
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
250V
Assembly/installation
PCB through-hole mounting
C(in)
1040pF
Channel type
P
Cost)
360pF
Drain-source protection
yes
Function
SWITCHING, POWER MOS FET
G-S Protection
no
Gate/source voltage (off) min.
4 v
Gate/source voltage Vgs
30 v
Id(imp)
24A
Number of terminals
3
On-resistance Rds On
0.55 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
35W
Quantity per case
1
Td(off)
47 ns
Td(on)
24 ns
Technology
P-CHANNEL POWER MOS FET
Type of transistor
MOSFET
Original product from manufacturer
Nec