P-channel transistor 2SJ119, TO-3P, -160V. Housing: TO-3P. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -160V. Ciss Gate Capacitance [pF]: 1050pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: -8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -5V. Manufacturer's marking: J119. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 100W. Number of terminals: 3. RoHS: no. Switch-off delay tf[nsec.]: 90 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: Hitachi. Quantity in stock updated on 11/01/2025, 19:07