MBR10100CT, 10A, 60.4k Ohms, TO-220, TO-220AC-3P, 100V

MBR10100CT, 10A, 60.4k Ohms, TO-220, TO-220AC-3P, 100V

Quantity
Unit price
1-4
0.89$
5-24
0.75$
25-49
0.65$
50-99
0.59$
100+
0.49$
Equivalence available
Quantity in stock: 8

MBR10100CT, 10A, 60.4k Ohms, TO-220, TO-220AC-3P, 100V. Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 100V. Assembly/installation: PCB through-hole mounting. Dielectric structure: Common Cathode. Forward voltage Vf (min): 0.78V. Function: Dual Schottky Barrier Rectifier Diode. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. Operating temperature: -65...+150°C. Quantity per case: 2. RoHS: yes. Semiconductor material: Sb. Spec info: Ifsm 120A (t=8.3ms). Threshold voltage Vf (max): 0.88V. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
MBR10100CT
19 parameters
Forward current (AV)
10A
IFSM
60.4k Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AC-3P
VRRM
100V
Assembly/installation
PCB through-hole mounting
Dielectric structure
Common Cathode
Forward voltage Vf (min)
0.78V
Function
Dual Schottky Barrier Rectifier Diode
MRI (max)
0.008mA
MRI (min)
8uA
Number of terminals
3
Operating temperature
-65...+150°C
Quantity per case
2
RoHS
yes
Semiconductor material
Sb
Spec info
Ifsm 120A (t=8.3ms)
Threshold voltage Vf (max)
0.88V
Original product from manufacturer
Taiwan Semiconductor

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