MBR10200CT, 10A, 60.4k Ohms, TO-220, TO-220AC-3P, 200V

MBR10200CT, 10A, 60.4k Ohms, TO-220, TO-220AC-3P, 200V

Quantity
Unit price
1-4
1.68$
5-49
1.39$
50-99
1.28$
100+
1.13$
Equivalence available
Quantity in stock: 7

MBR10200CT, 10A, 60.4k Ohms, TO-220, TO-220AC-3P, 200V. Forward current (AV): 10A. IFSM: 60.4k Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 200V. Assembly/installation: PCB through-hole mounting. Dielectric structure: Common Cathode. Forward voltage Vf (min): 0.87V. Function: Dual Schottky Barrier Rectifier Diode. MRI (max): 0.2mA. MRI (min): 0.2mA. Number of terminals: 3. Operating temperature: -65...+150°C. Quantity per case: 2. RoHS: yes. Semiconductor material: Sb. Spec info: Ifsm 120A (t=8.3ms). Threshold voltage Vf (max): 0.99V. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
MBR10200CT
19 parameters
Forward current (AV)
10A
IFSM
60.4k Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AC-3P
VRRM
200V
Assembly/installation
PCB through-hole mounting
Dielectric structure
Common Cathode
Forward voltage Vf (min)
0.87V
Function
Dual Schottky Barrier Rectifier Diode
MRI (max)
0.2mA
MRI (min)
0.2mA
Number of terminals
3
Operating temperature
-65...+150°C
Quantity per case
2
RoHS
yes
Semiconductor material
Sb
Spec info
Ifsm 120A (t=8.3ms)
Threshold voltage Vf (max)
0.99V
Original product from manufacturer
Taiwan Semiconductor

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